IPB14N03LA G
- Mfr.Part #
- IPB14N03LA G
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 30A TO263-3
- Stock
- 2,811
- In Stock :
- 2,811
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Pin Count :
- 4
- Drain Current-Max (Abs) (ID) :
- 30A
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 8.3nC @ 5V
- Pulsed Drain Current-Max (IDM) :
- 210A
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Reach Compliance Code :
- Compliant
- Terminal Finish :
- MATTE TIN
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 25V
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 13.6m Ω @ 30A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- RoHS Status :
- RoHS Compliant
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Published :
- 2006
- Surface Mount :
- yes
- Series :
- OptiMOS™
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1043pF @ 15V
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 2V @ 20μA
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 25V
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.0136Ohm
- Power Dissipation-Max :
- 46W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IPB14N03LA G

N-Channel Tape & Reel (TR) 13.6m Ω @ 30A, 10V ±20V 1043pF @ 15V 8.3nC @ 5V 25V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB14N03LA G Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 60 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1043pF @ 15V.30A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 210A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 25V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IPB14N03LA G Features
the avalanche energy rating (Eas) is 60 mJ
based on its rated peak drain current 210A.
a 25V drain to source voltage (Vdss)
IPB14N03LA G Applications
There are a lot of Infineon Technologies
IPB14N03LA G applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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