IPB14N03LA G

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Mfr.Part #
IPB14N03LA G
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 25V 30A TO263-3
Stock
2,811
In Stock :
2,811

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Pin Count :
4
Drain Current-Max (Abs) (ID) :
30A
Terminal Form :
Gull wing
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~175°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
8.3nC @ 5V
Pulsed Drain Current-Max (IDM) :
210A
JESD-30 Code :
R-PSSO-G2
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Reach Compliance Code :
Compliant
Terminal Finish :
MATTE TIN
Case Connection :
DRAIN
DS Breakdown Voltage-Min :
25V
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
13.6m Ω @ 30A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
LOGIC LEVEL COMPATIBLE
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
30A Tc
RoHS Status :
RoHS Compliant
Avalanche Energy Rating (Eas) :
60 mJ
Configuration :
SINGLE WITH BUILT-IN DIODE
ECCN Code :
EAR99
Published :
2006
Surface Mount :
yes
Series :
OptiMOS™
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
1043pF @ 15V
Number of Terminations :
2
Transistor Element Material :
SILICON
Qualification Status :
Not Qualified
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id :
2V @ 20μA
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Drain to Source Voltage (Vdss) :
25V
Mounting Type :
Surface Mount
Drain-source On Resistance-Max :
0.0136Ohm
Power Dissipation-Max :
46W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
IPB14N03LA G
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB14N03LA G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, IPB14N03LA G pinout, IPB14N03LA G datasheet PDF, IPB14N03LA G amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB14N03LA G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB14N03LA G


N-Channel Tape & Reel (TR) 13.6m Ω @ 30A, 10V ±20V 1043pF @ 15V 8.3nC @ 5V 25V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB14N03LA G Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 60 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1043pF @ 15V.30A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 210A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 25V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

IPB14N03LA G Features


the avalanche energy rating (Eas) is 60 mJ
based on its rated peak drain current 210A.
a 25V drain to source voltage (Vdss)


IPB14N03LA G Applications


There are a lot of Infineon Technologies
IPB14N03LA G applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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