IPB14N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

60 mJ

Pbfree Code :

No

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

210A

Peak Reflow Temperature (Cel) :

220

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0136Ohm

Rds On (Max) @ Id, Vgs :

13.6m Ω @ 30A, 10V

FET Type :

N-Channel

Rise Time :

27ns

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

2V @ 20μA

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1043pF @ 15V

Terminal Position :

Single

Voltage - Rated DC :

25V

JESD-609 Code :

e0

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Series :

OptiMOS™

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

Number of Elements :

1

Continuous Drain Current (ID) :

30A

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Published :

2003

Vgs (Max) :

±20V

Current Rating :

30A

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 5V

Power Dissipation-Max :

46W Tc

Case Connection :

DRAIN

Pin Count :

4