IPB140N08S404ATMA1
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- Mfr.Part #
- IPB140N08S404ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 140A TO263-7
- Stock
- 6,512
- In Stock ：
- 6,512
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 18 ns
- JESD-30 Code :
- R-PSSO-G6
- Drain-source On Resistance-Max :
- 0.0042Ohm
- Published :
- 2013
- Max Dual Supply Voltage :
- 80V
- Rise Time :
- 10ns
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 4.2m Ω @ 100A, 10V
- Factory Lead Time :
- 14 Weeks
- Number of Terminations :
- 6
- Lead Free :
- Contains Lead
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 560A
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Reach Compliance Code :
- not_compliant
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 212 mJ
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Power Dissipation-Max :
- 161W Tc
- Halogen Free :
- Halogen Free
- Continuous Drain Current (ID) :
- 140A
- Turn-Off Delay Time :
- 28 ns
- Fall Time (Typ) :
- 35 ns
- Vgs (Max) :
- ±20V
- Terminal Form :
- Gull wing
- Number of Pins :
- 7
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IPB140N08S404ATMA1
N-Channel Tape & Reel (TR) 4.2m Ω @ 100A, 10V ±20V 5500pF @ 25V 80nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)
IPB140N08S404ATMA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 212 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 140A amps.It is [28 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 560A.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 80V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPB140N08S404ATMA1 Features
the avalanche energy rating (Eas) is 212 mJ
a continuous drain current (ID) of 140A
the turn-off delay time is 28 ns
based on its rated peak drain current 560A.
IPB140N08S404ATMA1 Applications
There are a lot of Infineon Technologies
IPB140N08S404ATMA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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