IPB136N08N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

80 V

Series :

OptiMOS?3

Channel Type :

N Channel

Mounting Type :

Surface Mount

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

13.9mOhm @ 45A, 10V

Operating Temperature :

-55°C ~ 175°C (TJ)

Gate Charge (Qg) (Max) @ Vgs :

25 nC @ 10 V

Power Dissipation (Max) :

79W (Tc)

Package :

Bulk

Vgs(th) (Max) @ Id :

3.5V @ 33μA

Continuous Drain Current Id :

45

Input Capacitance (Ciss) (Max) @ Vds :

1730 pF @ 40 V

Supplier Device Package :

PG-TO263-3

Vgs (Max) :

±20V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

79

Current - Continuous Drain (Id) @ 25°C :

45A (Tc)

FET Feature :

-

Product Status :

Active