IPB136N08N3 G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3.5V @ 33μA

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Published :

2011

Drain-source On Resistance-Max :

0.0136Ohm

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1730pF @ 40V

Surface Mount :

yes

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Power Dissipation-Max :

79W Tc

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

13.6m Ω @ 45A, 10V

Drain to Source Voltage (Vdss) :

80V

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

RoHS Compliant

Series :

OptiMOS™

Pulsed Drain Current-Max (IDM) :

180A

Terminal Form :

Gull wing

Pin Count :

4

Case Connection :

DRAIN

Pbfree Code :

yes

JESD-609 Code :

e3

Number of Terminations :

2

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

45A Tc

DS Breakdown Voltage-Min :

80V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

45A

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

50 mJ