IPB12CN10N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Drain-source On Resistance-Max :

0.0126Ohm

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Published :

2007

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Terminal Form :

Gull wing

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

154 mJ

FET Type :

N-Channel

Mounting Type :

Surface Mount

Additional Feature :

FAST SWITCHING

Pulsed Drain Current-Max (IDM) :

268A

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Power Dissipation-Max :

125W Tc

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

100V

Vgs(th) (Max) @ Id :

4V @ 83μA

Drain Current-Max (Abs) (ID) :

67A

Rds On (Max) @ Id, Vgs :

12.6m Ω @ 67A, 10V

Drain to Source Voltage (Vdss) :

100V

Surface Mount :

yes

Case Connection :

DRAIN

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

4320pF @ 50V