IPB120P04P404ATMA1
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- Mfr.Part #
- IPB120P04P404ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 120A D2PAK
- Stock
- 41,944
- In Stock ：
- 41,944
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 480A
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 4V @ 340μA
- Factory Lead Time :
- 14 Weeks
- Reach Compliance Code :
- not_compliant
- Mount :
- Surface Mount
- Max Dual Supply Voltage :
- -40V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 14790pF @ 25V
- Published :
- 2013
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 52 ns
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Terminal Form :
- Gull wing
- Rise Time :
- 20ns
- Avalanche Energy Rating (Eas) :
- 78 mJ
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 100A, 10V
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 40V
- Power Dissipation-Max :
- 136W Tc
- FET Type :
- P-Channel
- Lead Free :
- Contains Lead
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 120A
- Turn On Delay Time :
- 30 ns
- Turn-Off Delay Time :
- 49 ns
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate Charge (Qg) (Max) @ Vgs :
- 205nC @ 10V
- Datasheets
- IPB120P04P404ATMA1
P-Channel Tape & Reel (TR) 3.5m Ω @ 100A, 10V ±20V 14790pF @ 25V 205nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB120P04P404ATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 78 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 14790pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 49 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 480A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 30 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by -40V.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPB120P04P404ATMA1 Features
the avalanche energy rating (Eas) is 78 mJ
a continuous drain current (ID) of 120A
the turn-off delay time is 49 ns
based on its rated peak drain current 480A.
a 40V drain to source voltage (Vdss)
IPB120P04P404ATMA1 Applications
There are a lot of Infineon Technologies
IPB120P04P404ATMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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