IPB120N08S404ATMA1
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- Mfr.Part #
- IPB120N08S404ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 120A D2PAK
- Stock
- 15,905
- In Stock ：
- 15,905
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 480A
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 6450pF @ 25V
- Terminal Form :
- Gull wing
- Avalanche Energy Rating (Eas) :
- 310 mJ
- Transistor Element Material :
- SILICON
- Max Dual Supply Voltage :
- 80V
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Lead Free :
- Contains Lead
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Published :
- 2013
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.0041Ohm
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 120A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 179W Tc
- Halogen Free :
- Halogen Free
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Number of Elements :
- 1
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Factory Lead Time :
- 14 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 120µA
- Rds On (Max) @ Id, Vgs :
- 4.1m Ω @ 100A, 10V
- Datasheets
- IPB120N08S404ATMA1
N-Channel Tape & Reel (TR) 4.1m Ω @ 100A, 10V ±20V 6450pF @ 25V 95nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB120N08S404ATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 310 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6450pF @ 25V.This device conducts a continuous drain current (ID) of 120A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 480A.With 80V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPB120N08S404ATMA1 Features
the avalanche energy rating (Eas) is 310 mJ
a continuous drain current (ID) of 120A
based on its rated peak drain current 480A.
IPB120N08S404ATMA1 Applications
There are a lot of Infineon Technologies
IPB120N08S404ATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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