IPB120N08S403ATMA1
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- Mfr.Part #
- IPB120N08S403ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 120A TO263-3
- Stock
- 5
- In Stock ：
- 5
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 60 ns
- Rds On (Max) @ Id, Vgs :
- 2.5m Ω @ 100A, 10V
- Avalanche Energy Rating (Eas) :
- 920 mJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 15ns
- Drain-source On Resistance-Max :
- 0.0025Ohm
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- HTS Code :
- 8541.29.00.95
- Turn On Delay Time :
- 30 ns
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Lead Free :
- Contains Lead
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 480A
- Factory Lead Time :
- 14 Weeks
- Mounting Type :
- Surface Mount
- Published :
- 2013
- Continuous Drain Current (ID) :
- 120A
- Input Capacitance (Ciss) (Max) @ Vds :
- 11550pF @ 25V
- Power Dissipation-Max :
- 278W Tc
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- not_compliant
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 50 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 167nC @ 10V
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 223μA
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Number of Terminations :
- 2
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Dual Supply Voltage :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Halogen Free :
- Halogen Free
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- IPB120N08S403ATMA1
N-Channel Tape & Reel (TR) 2.5m Ω @ 100A, 10V ±20V 11550pF @ 25V 167nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB120N08S403ATMA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 920 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 11550pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.It is [60 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 480A.A turn-on delay time of 30 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 80V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPB120N08S403ATMA1 Features
the avalanche energy rating (Eas) is 920 mJ
a continuous drain current (ID) of 120A
the turn-off delay time is 60 ns
based on its rated peak drain current 480A.
IPB120N08S403ATMA1 Applications
There are a lot of Infineon Technologies
IPB120N08S403ATMA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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