IPB120N06S4H1ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Power Dissipation-Max :

250W Tc

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

21900pF @ 25V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 200μA

Pulsed Drain Current-Max (IDM) :

480A

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Factory Lead Time :

16 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Max Dual Supply Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 100A, 10V

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Additional Feature :

Green

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Rise Time :

5ns

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Halogen Free :

Halogen Free

Fall Time (Typ) :

15 ns

Published :

2009

Transistor Element Material :

SILICON

Number of Elements :

1

Series :

Automotive, AEC-Q101, OptiMOS™

Number of Channels :

1

Drain to Source Breakdown Voltage :

60V

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

30 ns

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Turn-Off Delay Time :

60 ns

Continuous Drain Current (ID) :

120A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)