IPB120N06S4H1ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0021Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

1060 mJ

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

120A

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

250W Tc

Vgs(th) (Max) @ Id :

4V @ 200μA

Number of Elements :

1

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

480A

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 100A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

21900pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Published :

2009

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

ROHS3 Compliant

Series :

OptiMOS™

DS Breakdown Voltage-Min :

60V