IPB120N06S403ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin (Sn)

Rise Time :

10ns

Lead Free :

Lead Free

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 100A, 10V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

80 ns

JESD-30 Code :

R-PSSO-G2

Width :

9.25mm

Weight :

1.946308g

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0028Ohm

Pbfree Code :

yes

Mount :

Surface Mount

Fall Time (Typ) :

15 ns

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

13150pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 120µA

Number of Pins :

3

Number of Elements :

1

Max Dual Supply Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Length :

10mm

Factory Lead Time :

16 Weeks

Pulsed Drain Current-Max (IDM) :

480A

Turn On Delay Time :

40 ns

Transistor Element Material :

SILICON

Power Dissipation-Max :

167W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

120A

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Series :

Automotive, AEC-Q101, OptiMOS™

Number of Terminations :

2

Number of Channels :

1

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Height :

4.4mm