IPB120N06S403ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

392 mJ

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

167W Tc

Drain-source On Resistance-Max :

0.0028Ohm

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 100A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2009

Drain to Source Voltage (Vdss) :

60V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

60V

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

120A

Vgs(th) (Max) @ Id :

4V @ 120µA

Surface Mount :

yes

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

13150pF @ 25V

Vgs (Max) :

±20V

Series :

OptiMOS™

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

120A Tc

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

480A