IPB120N06S402ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

480A

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0024Ohm

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Number of Terminations :

2

Mounting Type :

Surface Mount

Number of Elements :

1

Surface Mount :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

60V

Drain Current-Max (Abs) (ID) :

120A

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 100A, 10V

Transistor Element Material :

SILICON

Power Dissipation-Max :

188W Tc

Terminal Form :

Gull wing

Terminal Position :

Single

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 140μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

15750pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

560 mJ