IPB120N06N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Series :

OptiMOS™

Additional Feature :

AVALANCHE RATED

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Published :

2011

Drain Current-Max (Abs) (ID) :

75A

Number of Elements :

1

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Rds On (Max) @ Id, Vgs :

11.7m Ω @ 75A, 10V

Pulsed Drain Current-Max (IDM) :

300A

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 94μA

FET Type :

N-Channel

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

280 mJ

DS Breakdown Voltage-Min :

60V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 30V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0117Ohm

Power Dissipation-Max :

158W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V