IPB120N04S402ATMA1
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- Mfr.Part #
- IPB120N04S402ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A D2PAK
- Stock
- 164,198
- In Stock ：
- 164,198
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- OptiMOS™
- Input Capacitance (Ciss) (Max) @ Vds :
- 10740pF @ 25V
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Power Dissipation-Max :
- 158W Tc
- Number of Pins :
- 3
- Published :
- 2010
- Avalanche Energy Rating (Eas) :
- 480 mJ
- Vgs(th) (Max) @ Id :
- 4V @ 110μA
- Pulsed Drain Current-Max (IDM) :
- 480A
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- not_compliant
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Max Dual Supply Voltage :
- 40V
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Contains Lead
- Rise Time :
- 16ns
- Halogen Free :
- Halogen Free
- Factory Lead Time :
- 16 Weeks
- Drain-source On Resistance-Max :
- 0.0018Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 120A
- Turn On Delay Time :
- 27 ns
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 134nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 1.8m Ω @ 100A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 30 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Code :
- e3
- Datasheets
- IPB120N04S402ATMA1
N-Channel Tape & Reel (TR) 1.8m Ω @ 100A, 10V ±20V 10740pF @ 25V 134nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB120N04S402ATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 480 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10740pF @ 25V.This device conducts a continuous drain current (ID) of 120A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 30 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 480A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 27 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 40V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPB120N04S402ATMA1 Features
the avalanche energy rating (Eas) is 480 mJ
a continuous drain current (ID) of 120A
the turn-off delay time is 30 ns
based on its rated peak drain current 480A.
IPB120N04S402ATMA1 Applications
There are a lot of Infineon Technologies
IPB120N04S402ATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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