IPB120N04S3-02

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

ULTRA LOW RESISTANCE

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

40V

Surface Mount :

yes

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

120A

Drain-source On Resistance-Max :

0.0023Ohm

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

40V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

480A

Input Capacitance (Ciss) (Max) @ Vds :

14300pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

yes

Power Dissipation-Max :

300W Tc

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

2m Ω @ 80A, 10V

Vgs(th) (Max) @ Id :

4V @ 230μA

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Published :

2007

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Pin Count :

4

Avalanche Energy Rating (Eas) :

1880 mJ

Operating Mode :

ENHANCEMENT MODE