IPB11N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

2V @ 20μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Qualification Status :

Not Qualified

Pin Count :

4

Drain-source On Resistance-Max :

0.0112Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1358pF @ 15V

Voltage - Rated DC :

25V

Series :

OptiMOS™

Rds On (Max) @ Id, Vgs :

11.2m Ω @ 30A, 10V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Continuous Drain Current (ID) :

30A

Number of Terminations :

2

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

210A

Published :

2006

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current Rating :

30A

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

52W Tc

Number of Elements :

1

Avalanche Energy Rating (Eas) :

80 mJ

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Application :

SWITCHING

Lead Free :

Contains Lead