IPB114N03L G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

Compliant

Pin Count :

4

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

38W Tc

Drain to Source Voltage (Vdss) :

30V

JESD-609 Code :

e3

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

Terminal Finish :

MATTE TIN

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

30V

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

210A

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 15V

Series :

OptiMOS™

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drain-source On Resistance-Max :

0.0114Ohm

Avalanche Energy Rating (Eas) :

30 mJ

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

30A

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

11.4m Ω @ 30A, 10V

FET Type :

N-Channel

RoHS Status :

RoHS Compliant