IPB110N20N3LFATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

11m Ω @ 88A, 10V

Drain Current-Max (Abs) (ID) :

11A

Current - Continuous Drain (Id) @ 25°C :

88A Tc

Series :

OptiMOS™ 3

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 100V

Gate Charge (Qg) (Max) @ Vgs :

76nC @ 10V

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Factory Lead Time :

13 Weeks

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Surface Mount :

yes

Number of Elements :

1

DS Breakdown Voltage-Min :

200V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.011Ohm

Avalanche Energy Rating (Eas) :

560 mJ

Drain to Source Voltage (Vdss) :

200V

Vgs(th) (Max) @ Id :

4.2V @ 260μA

Pulsed Drain Current-Max (IDM) :

352A

Transistor Element Material :

SILICON

Published :

2013

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

250W Tc