IPB110N06L G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

312A

Number of Elements :

1

Terminal Form :

Gull wing

Packaging :

Cut Tape (CT)

Terminal Finish :

MATTE TIN

Published :

2009

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

158W

Drain Current-Max (Abs) (ID) :

78A

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 30V

Number of Terminations :

2

Vgs(th) (Max) @ Id :

2V @ 94μA

Rds On (Max) @ Id, Vgs :

11m Ω @ 78A, 10V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

60V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 10V

Drain-source On Resistance-Max :

0.011Ohm

Current - Continuous Drain (Id) @ 25°C :

78A Tc

DS Breakdown Voltage-Min :

60V

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

280 mJ

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Surface Mount :

yes

Pin Count :

4

FET Type :

N-Channel

Reach Compliance Code :

Compliant

Operating Temperature (Max) :

175°C

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE