IPB10N03LB

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Lead Free :

Contains Lead

Current Rating :

50A

Additional Feature :

LOGIC LEVEL COMPATIBLE

Voltage - Rated DC :

30V

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Published :

2005

Rds On (Max) @ Id, Vgs :

9.6m Ω @ 50A, 10V

Case Connection :

DRAIN

JEDEC-95 Code :

TO-263AB

Continuous Drain Current (ID) :

50A

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

2V @ 20μA

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

1639pF @ 15V

Drain-source On Resistance-Max :

0.0096Ohm

ECCN Code :

EAR99

Power Dissipation-Max :

58W Tc

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

200A

FET Type :

N-Channel

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Mount :

Surface Mount

Series :

OptiMOS™

Transistor Element Material :

SILICON

Pin Count :

4

Avalanche Energy Rating (Eas) :

57 mJ