IPB108N15N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Turn On Delay Time :

17 ns

Series :

OptiMOS™

Lead Free :

Contains Lead

Power Dissipation :

214W

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Published :

2008

Threshold Voltage :

3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

10.8m Ω @ 83A, 10V

Fall Time (Typ) :

9 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

214W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Current - Continuous Drain (Id) @ 25°C :

83A Tc

REACH SVHC :

No SVHC

Halogen Free :

Halogen Free

Mount :

Surface Mount

FET Type :

N-Channel

Turn-Off Delay Time :

32 ns

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

83A

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

150V

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Terminal Position :

Single

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3230pF @ 75V

Vgs (Max) :

±20V

Pbfree Code :

No

Operating Mode :

ENHANCEMENT MODE

Rise Time :

35ns

Terminal Finish :

Tin (Sn)

Factory Lead Time :

13 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 160μA