IPB107N20NAATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 270μA

FET Type :

N-Channel

Max Dual Supply Voltage :

200V

Terminal Position :

Single

Continuous Drain Current (ID) :

88A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Turn On Delay Time :

18 ns

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

300W

ECCN Code :

EAR99

Number of Pins :

3

Transistor Application :

SWITCHING

Pin Count :

4

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Rise Time :

26ns

Input Capacitance (Ciss) (Max) @ Vds :

7100pF @ 100V

Published :

2008

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

11 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

10.7m Ω @ 88A, 10V

Power Dissipation-Max :

300W Tc

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Factory Lead Time :

13 Weeks

Lead Free :

Contains Lead

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

88A Tc

Avalanche Energy Rating (Eas) :

560 mJ

Turn-Off Delay Time :

41 ns

Pbfree Code :

No

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

10V