IPB100N08S2L07ATMA1

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Mfr.Part #
IPB100N08S2L07ATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 75V 100A TO263-3
Stock
17,710
In Stock :
17,710

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
19 ns
Vgs (Max) :
±20V
Operating Temperature :
-55°C~175°C TJ
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
6.5m Ω @ 80A, 10V
Fall Time (Typ) :
22 ns
Terminal Finish :
Tin (Sn)
Reach Compliance Code :
not_compliant
Max Dual Supply Voltage :
75V
Case Connection :
DRAIN
Drain-source On Resistance-Max :
0.0087Ohm
Halogen Free :
Halogen Free
Power Dissipation-Max :
300W Tc
Gate Charge (Qg) (Max) @ Vgs :
246nC @ 10V
JESD-609 Code :
e3
JESD-30 Code :
R-PSSO-G2
Continuous Drain Current (ID) :
100A
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
5400pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
FET Type :
N-Channel
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Series :
OptiMOS™
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
2V @ 250μA
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Pulsed Drain Current-Max (IDM) :
400A
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Rise Time :
56ns
Additional Feature :
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) :
810 mJ
Lead Free :
Contains Lead
Turn-Off Delay Time :
85 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tape and Reel (TR)
Number of Terminations :
2
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Published :
2006
Factory Lead Time :
10 Weeks
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB100N08S2L07ATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IPB100N08S2L07ATMA1 pinout, IPB100N08S2L07ATMA1 datasheet PDF, IPB100N08S2L07ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB100N08S2L07ATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB100N08S2L07ATMA1


N-Channel Tape & Reel (TR) 6.5m Ω @ 80A, 10V ±20V 5400pF @ 25V 246nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB100N08S2L07ATMA1 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 810 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 85 ns.Peak drain current for this device is 400A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 19 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 75V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

IPB100N08S2L07ATMA1 Features


the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 85 ns
based on its rated peak drain current 400A.


IPB100N08S2L07ATMA1 Applications


There are a lot of Infineon Technologies
IPB100N08S2L07ATMA1 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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