IPB100N08S207ATMA1
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- Mfr.Part #
- IPB100N08S207ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 100A TO263-3
- Stock
- 4,380
- In Stock ：
- 4,380
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 100A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 61 ns
- Terminal Form :
- Gull wing
- Max Dual Supply Voltage :
- 75V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 400A
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Drain-source On Resistance-Max :
- 0.0068Ohm
- Halogen Free :
- Halogen Free
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 300W Tc
- Rds On (Max) @ Id, Vgs :
- 6.8m Ω @ 80A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 51ns
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 810 mJ
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 14 Weeks
- Turn On Delay Time :
- 26 ns
- Series :
- OptiMOS™
- Lead Free :
- Contains Lead
- Fall Time (Typ) :
- 30 ns
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Datasheets
- IPB100N08S207ATMA1
N-Channel Tape & Reel (TR) 6.8m Ω @ 80A, 10V ±20V 4700pF @ 25V 200nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB100N08S207ATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 810 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 61 ns.Peak drain current is 400A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 26 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 75V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPB100N08S207ATMA1 Features
the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 61 ns
based on its rated peak drain current 400A.
IPB100N08S207ATMA1 Applications
There are a lot of Infineon Technologies
IPB100N08S207ATMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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