FQPF9P25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drain-source On Resistance-Max :

0.62Ohm

Factory Lead Time :

4 Weeks

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Surface Mount :

No

Terminal Position :

Single

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

50W Tc

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

620m Ω @ 3A, 10V

Pulsed Drain Current-Max (IDM) :

24A

DS Breakdown Voltage-Min :

250V

Avalanche Energy Rating (Eas) :

650 mJ

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

5V @ 250μA

Qualification Status :

Not Qualified

Packaging :

Tube

Package / Case :

TO-220-3 Full Pack

Transistor Application :

SWITCHING

HTS Code :

8541.29.00.95

Drain Current-Max (Abs) (ID) :

6A

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 25V

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Published :

2013

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

Isolated

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Drain to Source Voltage (Vdss) :

250V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Reach Compliance Code :

not_compliant