FQPF9N90CT
- Mfr.Part #
- FQPF9N90CT
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 8A TO220F
- Stock
- 7,817
- In Stock :
- 7,817
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Number of Pins :
- 3
- Series :
- QFET®
- Nominal Vgs :
- 3 V
- Weight :
- 2.27g
- Turn On Delay Time :
- 50 ns
- Mount :
- Through Hole
- Width :
- 4.9mm
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 100 ns
- Drain to Source Breakdown Voltage :
- 900V
- Length :
- 10.36mm
- Drain Current-Max (Abs) (ID) :
- 8A
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 75 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 10V
- Continuous Drain Current (ID) :
- 8A
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Factory Lead Time :
- 10 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- not_compliant
- Package / Case :
- TO-220-3 Full Pack
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2730pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 4A, 10V
- ECCN Code :
- EAR99
- Resistance :
- 1.4Ohm
- Power Dissipation-Max :
- 68W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Rise Time :
- 120ns
- Transistor Element Material :
- SILICON
- Height :
- 16.07mm
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 68W
- Case Connection :
- Isolated
- Threshold Voltage :
- 3V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Lead Free :
- Lead Free
- Datasheets
- FQPF9N90CT

N-Channel Tube 1.4 Ω @ 4A, 10V ±30V 2730pF @ 25V 58nC @ 10V TO-220-3 Full Pack
FQPF9N90CT Description
The FQPF9N90CT is an N-Channel enhancement mode power MOSFET that uses ON Semiconductor's planar stripe and DMOS technology. The FQPF9N90CT MOSFET technology has been specifically designed to lower on-state resistance while also delivering excellent switching performance and avalanche energy strength. Switched-mode power supply, active power factor correction (PFC), and electronic lamp ballasts can all benefit from FQPF9N90CT MOSFETs.
FQPF9N90CT Features
-
Low Crss ( Typ. 14pF)
-
100% avalanche tested
-
Low gate charge ( Typ. 45nC)
-
8.0A, 900V, RDS(on) = 1.4Ω(Max.) @VGS = 10 V, ID = 4A
FQPF9N90CT Applications
-
Other Industrial
-
Motor drive
-
DC motor control
-
Switch-mode power supplies
-
Audio amplifier
-
DC/DC converters
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