FQPF9N90C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

8A

Pbfree Code :

yes

Continuous Drain Current (ID) :

8A

Vgs (Max) :

±30V

Fall Time (Typ) :

75 ns

Nominal Vgs :

3 V

Transistor Application :

SWITCHING

Number of Terminations :

3

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2730pF @ 25V

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Operating Mode :

ENHANCEMENT MODE

Length :

10.36mm

Published :

2013

Case Connection :

Isolated

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Number of Elements :

1

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Turn On Delay Time :

50 ns

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

2.27g

Height :

16.07mm

Drain to Source Breakdown Voltage :

900V

Power Dissipation :

68W

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

68W Tc

Lead Free :

Lead Free

Threshold Voltage :

3V

Width :

4.9mm

Package / Case :

TO-220-3 Full Pack

Avalanche Energy Rating (Eas) :

900 mJ

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Gate to Source Voltage (Vgs) :

30V

Resistance :

1.4Ohm

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

120ns

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 4A, 10V

FET Type :

N-Channel

Turn-Off Delay Time :

100 ns

Factory Lead Time :

10 Weeks