FQPF9N50YDTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

COMMERCIAL

Vgs (Max) :

±30V

Terminal Finish :

Tin

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

500V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

5.3A

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

730m Ω @ 2.65A, 10V

Power Dissipation-Max :

50W Tc

Series :

QFET®

Package / Case :

TO-220-3 Full Pack, Formed Leads

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

21A

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain-source On Resistance-Max :

0.73Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

500V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

360 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1.45pF @ 25V

Surface Mount :

No

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Pin Count :

3