FQPF9N50T

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Pin Count :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1.45pF @ 25V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

Not Applicable

Power Dissipation-Max :

50W Tc

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

FET Type :

N-Channel

Pbfree Code :

yes

Terminal Position :

Single

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Drain Current-Max (Abs) (ID) :

5.3A

Qualification Status :

COMMERCIAL

Number of Terminations :

3

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

360 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

730m Ω @ 2.65A, 10V

Drain to Source Voltage (Vdss) :

500V

Drain-source On Resistance-Max :

0.73Ohm

Pulsed Drain Current-Max (IDM) :

21A

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Number of Elements :

1

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

500V

Case Connection :

Isolated