FQPF9N50CT

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

MATTE TIN

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Peak Reflow Temperature (Cel) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

360 mJ

DS Breakdown Voltage-Min :

500V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1.03pF @ 25V

Package / Case :

TO-220-3 Full Pack

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Surface Mount :

No

Pbfree Code :

yes

Transistor Element Material :

SILICON

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.8Ohm

Series :

QFET®

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

44W Tc

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

36A

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

9A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

800m Ω @ 4.5A, 10V

Drain to Source Voltage (Vdss) :

500V

JESD-30 Code :

R-PSFM-T3

Qualification Status :

COMMERCIAL

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Terminal Position :

Single

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)