FQPF9N50CF
- Mfr.Part #
- FQPF9N50CF
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 9
- Stock
- 1,767
- In Stock :
- 1,767
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Series :
- FRFET®
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 850m Ω @ 4.5A, 10V
- Power Dissipation-Max :
- 44W Tc
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Case Connection :
- Isolated
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Number of Pins :
- 3
- Length :
- 10.36mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Width :
- 4.9mm
- Turn-Off Delay Time :
- 93 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Drain Current-Max (Abs) (ID) :
- 9A
- Turn On Delay Time :
- 18 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1030pF @ 25V
- Rise Time :
- 65ns
- Power Dissipation :
- 44W
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Package / Case :
- TO-220-3 Full Pack
- Resistance :
- 850mOhm
- JEDEC-95 Code :
- TO-220AB
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Published :
- 2012
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Mount :
- Through Hole
- Threshold Voltage :
- 4V
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 500V
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 64 ns
- Continuous Drain Current (ID) :
- 9A
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 16.07mm
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Weight :
- 2.27g
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Datasheets
- FQPF9N50CF

N-Channel Tube 850m Ω @ 4.5A, 10V ±30V 1030pF @ 25V 35nC @ 10V TO-220-3 Full Pack
FQPF9N50CF Description
FQPF9N50CF is a type of N-Channel QFET? MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology. It is able to provide low on-state resistance, superior switching performance, and high avalanche energy strength. It is ideally suitable for switched-mode power supplies, active power factor correction, and electronic lamp ballasts.
FQPF9N50CF Features
-
Low gate charge
-
Low on-state resistance
-
Superior switching performance
-
High avalanche energy strength
-
Available in the TO-220F package
FQPF9N50CF Applications
-
Switched-mode power supplies
-
Active power factor correction
-
Electronic lamp ballasts
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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