FQPF9N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.8Ohm

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Power Dissipation-Max :

44W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Element Configuration :

Single

Fall Time (Typ) :

64 ns

Current Rating :

9A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

9A

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Weight :

2.27g

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Lead Free :

Lead Free

ECCN Code :

EAR99

Continuous Drain Current (ID) :

9A

Drain to Source Breakdown Voltage :

500V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 25V

Power Dissipation :

44W

JESD-609 Code :

e3

Case Connection :

Isolated

Voltage - Rated DC :

500V

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Number of Pins :

3

Turn-Off Delay Time :

93 ns

Number of Elements :

1

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 3 days ago)

Terminal Finish :

Tin (Sn)

Published :

2003

Mount :

Through Hole

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Rise Time :

65ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

800m Ω @ 4.5A, 10V