FQPF9N50
- Mfr.Part #
- FQPF9N50
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 5.3A TO220F
- Stock
- 43,450
- In Stock :
- 43,450
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- REACH SVHC :
- No SVHC
- Drain Current-Max (Abs) (ID) :
- 9A
- Drain-source On Resistance-Max :
- 0.8Ohm
- Package / Case :
- TO-220-3 Full Pack
- Rise Time :
- 65ns
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 500V
- Power Dissipation-Max :
- 44W Tc
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 4.5A, 10V
- Pbfree Code :
- yes
- Threshold Voltage :
- 4V
- Weight :
- 2.27g
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Current Rating :
- 9A
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 44W
- Series :
- QFET®
- Gate to Source Voltage (Vgs) :
- 30V
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 93 ns
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1030pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 64 ns
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- JEDEC-95 Code :
- TO-220AB
- Terminal Finish :
- Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 500V
- Case Connection :
- Isolated
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 9A
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Published :
- 2003
- Datasheets
- FQPF9N50

N-Channel Tube 800m Ω @ 4.5A, 10V ±30V 1030pF @ 25V 35nC @ 10V TO-220-3 Full Pack
FQPF9N50C Description
These N-channel enhanced power field effect transistors FQPF9N50C are produced using on Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are very suitable for efficient switching mode power supplies, active power factor correction and electronic lamp ballasts based on half-bridge topology.
FQPF9N50C Features
9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A
Low Gate Charge (Typ. 28 nC)
Low Crss (Typ. 24 pF)
100% Avalanche Tested
FQPF9N50C Applications
efficient switching mode power supplies
active power factor correction
electronic lamp ballasts
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