FQPF9N50

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Mfr.Part #
FQPF9N50
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 500V 5.3A TO220F
Stock
43,450
In Stock :
43,450

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
REACH SVHC :
No SVHC
Drain Current-Max (Abs) (ID) :
9A
Drain-source On Resistance-Max :
0.8Ohm
Package / Case :
TO-220-3 Full Pack
Rise Time :
65ns
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
9A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Voltage - Rated DC :
500V
Power Dissipation-Max :
44W Tc
Rds On (Max) @ Id, Vgs :
800m Ω @ 4.5A, 10V
Pbfree Code :
yes
Threshold Voltage :
4V
Weight :
2.27g
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Current Rating :
9A
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
44W
Series :
QFET®
Gate to Source Voltage (Vgs) :
30V
Mount :
Through Hole
Turn-Off Delay Time :
93 ns
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
1030pF @ 25V
Vgs(th) (Max) @ Id :
4V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
64 ns
Transistor Application :
SWITCHING
FET Type :
N-Channel
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 3 days ago)
JEDEC-95 Code :
TO-220AB
Terminal Finish :
Tin (Sn)
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Through Hole
RoHS Status :
RoHS Compliant
JESD-609 Code :
e3
Vgs (Max) :
±30V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Element Configuration :
Single
Drain to Source Breakdown Voltage :
500V
Case Connection :
Isolated
Number of Elements :
1
Lead Free :
Lead Free
Continuous Drain Current (ID) :
9A
Number of Terminations :
3
Transistor Element Material :
SILICON
Published :
2003
Datasheets
FQPF9N50
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQPF9N50 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, FQPF9N50 pinout, FQPF9N50 datasheet PDF, FQPF9N50 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQPF9N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQPF9N50


N-Channel Tube 800m Ω @ 4.5A, 10V ±30V 1030pF @ 25V 35nC @ 10V TO-220-3 Full Pack

FQPF9N50C   Description


  These N-channel enhanced power field effect transistors  FQPF9N50C  are produced using on Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are very suitable for efficient switching mode power supplies, active power factor correction and electronic lamp ballasts based on half-bridge topology.

 

FQPF9N50C      Features

 

9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A

Low Gate Charge (Typ. 28 nC)

Low Crss (Typ. 24 pF)

100% Avalanche Tested

 

FQPF9N50C      Applications


efficient switching mode power supplies

 active power factor correction

 electronic lamp ballasts


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