FQPF9N30

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Number of Terminations :

3

Drain-source On Resistance-Max :

0.45Ohm

Pulsed Drain Current-Max (IDM) :

24A

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

Not Applicable

Drain Current-Max (Abs) (ID) :

6A

DS Breakdown Voltage-Min :

300V

JESD-609 Code :

e3

Terminal Position :

Single

Power Dissipation-Max :

42W Tc

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Drain to Source Voltage (Vdss) :

300V

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

420 mJ

Surface Mount :

No

Case Connection :

Isolated

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

Pin Count :

3

Rds On (Max) @ Id, Vgs :

450m Ω @ 3A, 10V

RoHS Status :

ROHS3 Compliant