FQPF9N25CT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

8.8A Tc

Pin Count :

3

Avalanche Energy Rating (Eas) :

285 mJ

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

250V

Package / Case :

TO-220-3 Full Pack

Transistor Application :

SWITCHING

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

QFET®

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

FET Type :

N-Channel

Power Dissipation-Max :

38W Tc

Number of Elements :

1

Drain-source On Resistance-Max :

0.43Ohm

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

JESD-609 Code :

e3

Vgs (Max) :

±30V

Pbfree Code :

yes

Terminal Finish :

MATTE TIN

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

8.8A

Pulsed Drain Current-Max (IDM) :

35.2A

Drain to Source Voltage (Vdss) :

250V

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 25V

Rds On (Max) @ Id, Vgs :

430m Ω @ 4.4A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V