FQPF9N25C

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

8.8A Tc

Mount :

Through Hole

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

250V

Published :

2004

Rise Time :

85ns

JESD-609 Code :

e3

Continuous Drain Current (ID) :

8.8A

Number of Pins :

3

Power Dissipation :

38W

ECCN Code :

EAR99

Element Configuration :

Single

Number of Terminations :

3

FET Type :

N-Channel

Height :

9.19mm

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.16mm

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

285 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 25V

Lead Free :

Lead Free

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

430m Ω @ 4.4A, 10V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Voltage - Rated DC :

250V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Packaging :

Tube

Turn On Delay Time :

15 ns

Turn-Off Delay Time :

90 ns

Current Rating :

8.8A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Case Connection :

Isolated

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Mounting Type :

Through Hole

Factory Lead Time :

5 Weeks

Width :

4.7mm

Resistance :

430mOhm

Power Dissipation-Max :

38W Tc

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Terminal Finish :

Tin (Sn)

Weight :

2.27g

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3 Full Pack

Fall Time (Typ) :

65 ns