FQPF9N25

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Length :

10.16mm

Weight :

2.27g

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 25V

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

Terminal Finish :

Tin (Sn)

Rise Time :

85ns

Lead Free :

Lead Free

Case Connection :

Isolated

Height :

9.19mm

Number of Terminations :

3

Radiation Hardening :

No

Resistance :

430mOhm

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mount :

Through Hole

Fall Time (Typ) :

65 ns

Vgs (Max) :

±30V

Published :

2004

Pbfree Code :

yes

Voltage - Rated DC :

250V

Power Dissipation-Max :

38W Tc

ECCN Code :

EAR99

Turn On Delay Time :

15 ns

Current - Continuous Drain (Id) @ 25°C :

8.8A Tc

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Turn-Off Delay Time :

90 ns

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

5 Weeks

Drain to Source Breakdown Voltage :

250V

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

285 mJ

Rds On (Max) @ Id, Vgs :

430m Ω @ 4.4A, 10V

Continuous Drain Current (ID) :

8.8A

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

38W

Packaging :

Tube

Width :

4.7mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Current Rating :

8.8A