FQPF90N10V2

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

100V

Pin Count :

3

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

360A

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Number of Elements :

1

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

Not Applicable

Transistor Application :

SWITCHING

Pbfree Code :

yes

Power Dissipation-Max :

83W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

10m Ω @ 45A, 10V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Qualification Status :

COMMERCIAL

Reach Compliance Code :

Unknown

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

90A

Avalanche Energy Rating (Eas) :

2430 mJ

Series :

QFET®

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

191nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

6.15pF @ 25V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drain-source On Resistance-Max :

0.01Ohm

Case Connection :

Isolated