FQPF8P10

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Packaging :

Tube

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

28W Tc

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

5.3A

Drain to Source Voltage (Vdss) :

100V

Avalanche Energy Rating (Eas) :

150 mJ

Terminal Position :

Single

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

21.2A

Transistor Element Material :

SILICON

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

530m Ω @ 2.65A, 10V

Pbfree Code :

yes

DS Breakdown Voltage-Min :

100V

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.53Ohm

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 25V

Number of Terminations :

3

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

Not Applicable

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

Series :

QFET®

Case Connection :

Isolated