FQPF8P10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

21.2A

Drain-source On Resistance-Max :

0.53Ohm

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3 Full Pack

Peak Reflow Temperature (Cel) :

Not Applicable

Case Connection :

Isolated

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Pbfree Code :

yes

Terminal Position :

Single

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

Avalanche Energy Rating (Eas) :

150 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

100V

Series :

QFET®

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

5.3A

Qualification Status :

COMMERCIAL

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

MATTE TIN

Number of Terminations :

3

Power Dissipation-Max :

28W Tc

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

530m Ω @ 2.65A, 10V

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

FET Type :

P-Channel