FQPF8N90C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

70 ns

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Transistor Application :

SWITCHING

Power Dissipation :

60W

Continuous Drain Current (ID) :

6.3A

Factory Lead Time :

5 Weeks

Power Dissipation-Max :

60W Tc

Case Connection :

Isolated

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2080pF @ 25V

Number of Pins :

3

Mount :

Through Hole

Turn On Delay Time :

40 ns

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Lead Free :

Lead Free

Element Configuration :

Single

Rise Time :

110ns

Pulsed Drain Current-Max (IDM) :

25A

Fall Time (Typ) :

70 ns

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

2.27g

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-220-3 Full Pack

JESD-609 Code :

e3

Voltage - Rated DC :

900V

Avalanche Energy Rating (Eas) :

850 mJ

ECCN Code :

EAR99

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3.15A, 10V

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

6.3A Tc

Current Rating :

6.3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Packaging :

Tube

Mounting Type :

Through Hole

Number of Elements :

1

Drain to Source Breakdown Voltage :

900V