FQPF8N80CYDTU
- Mfr.Part #
- FQPF8N80CYDTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack, Formed Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 8A TO220F-3
- Stock
- 19,442
- In Stock :
- 19,442
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 850 mJ
- Rds On (Max) @ Id, Vgs :
- 1.55 Ω @ 4A, 10V
- Mount :
- Through Hole
- Fall Time (Typ) :
- 70 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Resistance :
- 1.55Ohm
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 25V
- Case Connection :
- Isolated
- Power Dissipation :
- 59W
- Terminal Finish :
- Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 65 ns
- Drain Current-Max (Abs) (ID) :
- 8A
- Element Configuration :
- Single
- Power Dissipation-Max :
- 59W Tc
- Rise Time :
- 110ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Weight :
- 2.565g
- Pbfree Code :
- yes
- Turn On Delay Time :
- 40 ns
- Published :
- 2013
- Continuous Drain Current (ID) :
- 8A
- Drain to Source Breakdown Voltage :
- 800V
- Number of Pins :
- 3
- Number of Elements :
- 1
- Package / Case :
- TO-220-3 Full Pack, Formed Leads
- JESD-609 Code :
- e3
- Series :
- QFET®
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current Rating :
- 8A
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-220AB
- Voltage - Rated DC :
- 800V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Reach Compliance Code :
- not_compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- FQPF8N80CYDTU

N-Channel Tube 1.55 Ω @ 4A, 10V ±30V 2050pF @ 25V 45nC @ 10V TO-220-3 Full Pack, Formed Leads
FQPF8N80CYDTU Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 850 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2050pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.There is no drain current on this device since the maximum continuous current it can conduct is 8A.As a result of its turn-off delay time, which is 65 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 40 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
FQPF8N80CYDTU Features
the avalanche energy rating (Eas) is 850 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 65 ns
FQPF8N80CYDTU Applications
There are a lot of ON Semiconductor
FQPF8N80CYDTU applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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