FQPF8N80CYDTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Package / Case :

TO-220-3 Full Pack, Formed Leads

Mount :

Through Hole

Transistor Application :

SWITCHING

Weight :

2.565g

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

8A

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant

Current Rating :

8A

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Rds On (Max) @ Id, Vgs :

1.55 Ω @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Element Configuration :

Single

Turn On Delay Time :

40 ns

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

8A

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

59W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Resistance :

1.55Ohm

Fall Time (Typ) :

70 ns

Voltage - Rated DC :

800V

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

850 mJ

FET Type :

N-Channel

Rise Time :

110ns

Turn-Off Delay Time :

65 ns

Series :

QFET®

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

59W

Drain to Source Breakdown Voltage :

800V

Published :

2013