FQPF8N80C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

800V

Width :

4.7mm

Series :

QFET®

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

5V @ 250μA

Current Rating :

8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Lead Free :

Lead Free

FET Type :

N-Channel

REACH SVHC :

No SVHC

Weight :

2.27g

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

JEDEC-95 Code :

TO-220AB

Power Dissipation :

59W

Fall Time (Typ) :

70 ns

Continuous Drain Current (ID) :

8A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Package / Case :

TO-220-3 Full Pack

Turn-Off Delay Time :

65 ns

JESD-609 Code :

e3

Radiation Hardening :

No

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

Turn On Delay Time :

40 ns

Published :

2003

Height :

9.19mm

Vgs (Max) :

±30V

Element Configuration :

Single

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

5V

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

8A

Operating Mode :

ENHANCEMENT MODE

Resistance :

1.55Ohm

Avalanche Energy Rating (Eas) :

850 mJ

Number of Pins :

3

Number of Terminations :

3

Rise Time :

110ns

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Mounting Type :

Through Hole

Mount :

Through Hole

Case Connection :

Isolated

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Number of Elements :

1

Drain to Source Breakdown Voltage :

800V

Rds On (Max) @ Id, Vgs :

1.55 Ω @ 4A, 10V

Power Dissipation-Max :

59W Tc

Length :

10.16mm

Drive Voltage (Max Rds On,Min Rds On) :

10V