FQPF8N60CYDTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1.255pF @ 25V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Pbfree Code :

yes

DS Breakdown Voltage-Min :

600V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

600V

Package / Case :

TO-220-3 Full Pack, Formed Leads

Pin Count :

3

Additional Feature :

FAST SWITCHING

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Number of Elements :

1

Avalanche Energy Rating (Eas) :

230 mJ

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

7.5A

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Surface Mount :

No

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

48W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.75A, 10V

Pulsed Drain Current-Max (IDM) :

30A