FQPF8N60CYDTU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

30A

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Mounting Type :

Through Hole

Packaging :

Tube

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

1.255pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

FAST SWITCHING

Qualification Status :

COMMERCIAL

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3 Full Pack, Formed Leads

Number of Terminations :

3

Series :

QFET®

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

230 mJ

Drain to Source Voltage (Vdss) :

600V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

7.5A

Transistor Application :

SWITCHING

Surface Mount :

No

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.75A, 10V

Vgs (Max) :

±30V

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

Isolated

Pbfree Code :

yes

Power Dissipation-Max :

48W Tc