FQPF8N60CT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Element Configuration :

Single

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.75A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1255pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

48W Tc

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Drain to Source Breakdown Voltage :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Published :

2007

Package / Case :

TO-220-3 Full Pack

Power Dissipation :

48W

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

81 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

6.26A

Number of Elements :

1

Weight :

2.27g

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

64.5 ns

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

FET Type :

N-Channel

Rise Time :

60.5ns

Mounting Type :

Through Hole

Number of Pins :

3