FQPF8N60CFT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

2.27g

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Number of Terminations :

3

Transistor Application :

SWITCHING

Published :

2013

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Series :

FRFET®

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Power Dissipation :

48W

Packaging :

Tube

Package / Case :

TO-220-3 Full Pack

Case Connection :

Isolated

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

16.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

81 ns

HTS Code :

8541.29.00.95

Pulsed Drain Current-Max (IDM) :

25A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

600V

Number of Pins :

3

Radiation Hardening :

No

Mounting Type :

Through Hole

Rise Time :

60.5ns

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Fall Time (Typ) :

64.5 ns

Mount :

Through Hole

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1255pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

6.26A Tc

Element Configuration :

Single

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

6.26A

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.13A, 10V

Factory Lead Time :

9 Weeks

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

48W Tc

Avalanche Energy Rating (Eas) :

160 mJ

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)