FQPF8N60CFT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

6.26A

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Power Dissipation-Max :

48W Tc

Number of Pins :

3

Turn-Off Delay Time :

81 ns

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

16.5 ns

Rise Time :

60.5ns

Published :

2013

Mount :

Through Hole

Element Configuration :

Single

Number of Elements :

1

Transistor Application :

SWITCHING

Factory Lead Time :

9 Weeks

Fall Time (Typ) :

64.5 ns

Series :

FRFET®

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

25A

Packaging :

Tube

Power Dissipation :

48W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

6.26A Tc

FET Type :

N-Channel

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.13A, 10V

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drain to Source Breakdown Voltage :

600V

HTS Code :

8541.29.00.95

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

2.27g

Input Capacitance (Ciss) (Max) @ Vds :

1255pF @ 25V

Avalanche Energy Rating (Eas) :

160 mJ

ECCN Code :

EAR99